FF6MR12W2M1_B11
Manufacturer: Infineon
Power Field-Effect Transistor, 200A I(D), 1200V, 0.00563ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
| Part Number: | FF6MR12W2M1_B11 |
|---|---|
| Generic: | FF6MR12 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | UL |
|---|---|
| Date of Introduction: | May 2019 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 35 |
| Operating Temperature: | -40.0°C to 150.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
2ASC-12A2HP
|
Microchip |
| Functional Equivalent |
MSC180SMA120B
|
Microchip |
| Manufacturer Suggested |
MSCSM120AM11CT3AG
|
Microchip |
| Functional Equivalent |
SCT20N120AG
|
ST Micro |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: High
- Environmental: Med
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic