Power Field-Effect Transistors Active Mature

BSZ160N10NS3GATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 40A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: BSZ160N10NS3GATMA1
Generic: BSZ160N10
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2009
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies BSZ160N10NS3GATMA1, sourced from INFINEON. Inventory shown on this page reflects quantity on hand when available: 18532 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something looks

Type Part Number Manufacturer
Functional Equivalent BSC160N10NS3GXT Infineon
Functional Equivalent BSZ160N10NS3GXT Infineon
Manufacturer Suggested CSD19537Q3 TI
Manufacturer Suggested FDMC86160 Onsemi
Functional Equivalent SP000482382 Infineon
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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