Power Field-Effect Transistors Discontinued

BSZ12DN20NS3G

Manufacturer: Infineon

Power Field-Effect Transistor, 11.3A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OptiMOS 3Power-Transistor
Part Number: BSZ12DN20NS3G
Generic: BSZ12
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: September 2010
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent BSC12DN20NS3G Infineon
Functional Equivalent BSC12DN20NS3GATMA1 Infineon
Functional Equivalent BSC12DN20NS3GXT Infineon
Manufacturer Suggested BSZ900N20NS3G Infineon
Pricing & Availability
Pricing information not available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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