Power Field-Effect Transistors Active Mature

BSZ097N04LSGATMA1

Manufacturer: Infineon

Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS 3 POWER-TRANSISTOR
Part Number: BSZ097N04LSGATMA1
Generic: BSZ097N04
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: December 2007
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies BSZ097N04LSGATMA1 from INFINEON. Inventory shown on this page reflects quantity on hand when available: 204336 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies before.

Type Part Number Manufacturer
Functional Equivalent BSZ097N04LSG Infineon
Functional Equivalent BSZ097N04LSGXT Infineon
Manufacturer Suggested CSD18543Q3A TI
Pricing & Availability
204336 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: High

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