Power Field-Effect Transistors Discontinued

BSO615NG

Manufacturer: Infineon

Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: sipmos small signal transistor
Part Number: BSO615NG
Generic: BSO615
CAGE Code: C6489, 4KYR2
NSN: 5961-01-657-3905
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: February 2007
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent IRF7103 Infineon
Functional Equivalent IRF7103TRPBF Infineon
Functional Equivalent NDS9945 Onsemi
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

View Details
2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

View Details
2N4856

Power Field-Effect Transistor

Microchip

View Details
2N4857

Power Field-Effect Transistor

Microchip

View Details