Power Field-Effect Transistors Active Mature

BSC109N10NS3G

Manufacturer: Infineon

Power Field-Effect Transistor, 63A I(D), 100V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: OPTIMOS3 POWER-TRANSISTOR
Part Number: BSC109N10NS3G
Generic: BSC109N10
CAGE Code: C6489, 4KYR2
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: April 2010
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent BSC109N10NS3GATMA1 Infineon
Functional Equivalent BSC109N10NS3GXT Infineon
Functional Equivalent FMC80N10T2 Fuji Elec
Functional Equivalent IPB70N10S3-12 Infineon
Functional Equivalent IPB70N10S312ATMA2 Infineon
Functional Equivalent IPB70N10S312XT Infineon
Functional Equivalent IPB70N10S3L-12 Infineon
Functional Equivalent IPB70N10S3L12ATMA2 Infineon
Functional Equivalent IPD70N10S3-12 Infineon
Functional Equivalent IPD70N10S312ATMA2 Infineon
Functional Equivalent IPI70N10S312XK Infineon
Functional Equivalent IPP114N12N3G Infineon
Functional Equivalent IPP114N12N3GXKSA1 Infineon
Functional Equivalent IPP70N10S312XK Infineon
Functional Equivalent IRHNA57160SCVPBF Infineon
Functional Equivalent IXTP80N10T Littelfuse
Pricing & Availability
Pricing information not available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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