Power Field-Effect Transistors
Active
Mature
BSC026N04LSATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 23A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
OPTIMOS POWER-MOSFET
| Part Number: | BSC026N04LSATMA1 |
|---|---|
| Generic: | BSC026N04 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | January 2011 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSC026N04LS
|
Infineon |
| Functional Equivalent |
BSZ028N04LS
|
Infineon |
| Functional Equivalent |
BSZ028N04LSATMA1
|
Infineon |
| Functional Equivalent |
DMTH4005SPSQ-13
|
Diodes |
| Manufacturer Suggested |
FDMS015N04B
|
Onsemi |
Pricing & Availability
24832 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med-High
Need help? Email sales or call (800) 701-8152.