BSC010N04LSATMA1
Manufacturer: Infineon
Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | BSC010N04LSATMA1 |
|---|---|
| Generic: | BSC010 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | February 2012 |
|---|---|
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 8 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
BSC010N04LS
|
Infineon |
| Functional Equivalent |
BSC010N04LSI
|
Infineon |
| Functional Equivalent |
BSC010N04LSIATMA1
|
Infineon |
| Functional Equivalent |
CSD18510Q5B
|
TI |
| Functional Equivalent |
CSD18510Q5BT
|
TI |
| Manufacturer Suggested |
FDMS015N04B
|
Onsemi |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic