AUIRF5210STRL
Manufacturer: Infineon
Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
| Part Number: | AUIRF5210STRL |
|---|---|
| Generic: | AUIRF5210 |
| CAGE Code: | C6489, 4KYR2 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | August 2012 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
IRF5210
|
Infineon |
| Functional Equivalent |
IRF5210PBF
|
Infineon |
| FFF Alternates |
IRF5210S
|
Infineon |
| Functional Equivalent |
IRF5210S
|
Infineon |
| Functional Equivalent |
IRF5210S
|
NJ Semi |
| FFF Alternates |
IRF5210STRLPBF
|
Infineon |
| Functional Equivalent |
IRF5210STRLPBF
|
Infineon |
| Functional Equivalent |
IXTA52P10P
|
Littelfuse |
| Functional Equivalent |
MCB40P10Y
|
MCC |
| Functional Equivalent |
MCB40P10Y-TP
|
MCC |
| Functional Equivalent |
SHD225452
|
Sensitron |
| Functional Equivalent |
SHD225452S
|
Sensitron |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: High
- Environmental: Med
- Supply Chain: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic