HWC27YC
Manufacturer: Hexawave
RF Power Field-Effect Transistor, N-Channel
| Part Number: | HWC27YC |
|---|---|
| Generic: | HWC27 |
| Category: | RF Power Field-Effect Transistors |
| Part Type: | Transistors |
| Lifecycle Stage: | N/A |
|---|
Package Information
Compliance & Certifications
Pricing & Availability
Browse More
Risk Indicators
- Lifecycle: Med
- Environmental: High
- Supply Chain: Low-Med
Related Products
2SK3075
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Toshiba
2SK3079A
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Toshiba
A2G22S251-01SR3
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET
NXP