RF Power Field-Effect Transistors Discontinued

MRF6S19100NBR1

Manufacturer: Freescale

RF Power Field-Effect Transistor, 1-Element, L Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, TO-272

Manufacturer Description: RF POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFET
Part Number: MRF6S19100NBR1
Generic: MRF6S19100
CAGE Code: 04713
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2005
Lifecycle Stage: Discontinued

Package Information
Package Style: FLANGE MOUNT
Terminals: 4

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested MRF7S19100NBR1 Freescale
Manufacturer Suggested MRF7S19100NR1 Freescale
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Low

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP