RF Power Field-Effect Transistors Active Mature

BLF6G27-10G,118

Manufacturer: Flip Elect

RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: WIMAX POWER LDMOS TRANSISTOR
Part Number: BLF6G27-10G,118
Generic: BLF6G27
CAGE Code: 7MHY4
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2011
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: Low
  • Supply Chain: Low-Med

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details