RF Power Field-Effect Transistors Discontinued

BCP060T

Manufacturer: Berex

RF Power Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Manufacturer Description: HIGH EFFICIENCY PHEMT POWER FET CHIP
Part Number: BCP060T
Generic: BCP060
CAGE Code: 2N96F, 6MTE9
Category: RF Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2015
Lifecycle Stage: Discontinued
Package Information
Package Style: UNCASED CHIP
Terminals: 4
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

View Details
A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

View Details
A2I25D025NR1

RF Power Field-Effect Transistor

NXP

View Details