RF Power Field-Effect Transistors Active Mature

MRF171

Manufacturer: ASI

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Manufacturer Description: N-CHANNEL ENHANCEMENT MODE TMOS RF FET
Part Number: MRF171
Generic: MRF171
CAGE Code: 4U751, 6LHN9
Category: RF Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: August 2004
Lifecycle Stage: Mature

Package Information
Package Style: FLANGE MOUNT
Terminals: 4

Compliance & Certifications
Type Part Number Manufacturer
Active Manufacturers NJ Semi 2D085
Manufacturer Suggested VFT45-28 ASI
Pricing & Availability
8 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?

Browse More

Risk Indicators
  • Lifecycle: Low
  • Supply Chain: Low-Med

Need help? Email sales or call (800) 701-8152.

Related Products

2SK3075

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

2SK3079A

RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

Toshiba

A2G22S251-01SR3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Nitride, N-Channel, Metal-oxide Semiconductor FET

NXP

A2I25D025NR1

RF Power Field-Effect Transistor

NXP