Power Field-Effect Transistor, 3A I(D), 1200V, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247AB
GA03JT12-247 · Genesic Semi
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Rectifier Diode, Schottky, 1 Phase, 1 Element, 33A, 1200V V(RRM), Silicon Carbide, TO-252
GB10SLT12-252 · Genesic Semi
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