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Power Field-Effect Transistors

Browse our selection of power field-effect transistors products

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IPD50R399CP
Infineon
Power Field-Effect Transistor, 9A I(D), 500V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD50R500CE
Infineon
Power Field-Effect Transistor, 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD50R520CP
Infineon
Power Field-Effect Transistor, 7.1A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD530N15N3G
Infineon
Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD600N25N3G
Infineon
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD600N25N3GATMA1
Infineon
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD600N25N3GBTMA1
Infineon
Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD60R180P7ATMA1
Infineon
Power Field-Effect Transistor, 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R180P7S
Infineon
Power Field-Effect Transistor, 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R1K0CE
Infineon
Power Field-Effect Transistor, 6.8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R1K4C6
Infineon
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R1K5CE
Infineon
Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R280P7
Infineon
Power Field-Effect Transistor, 12A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R360P7S
Infineon
Power Field-Effect Transistor, 9A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R380C6
Infineon
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R380C6ATMA1
Infineon
Power Field-Effect Transistor, 10.6A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R385CP
Infineon
Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
IPD60R3K3C6
Infineon
Power Field-Effect Transistor, 1.7A I(D), 600V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R3K4CE
Infineon
Power Field-Effect Transistor, 2.6A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R400CE
Infineon
Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R400CEATMA1
Infineon
Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R400CEAUMA1
Infineon
Power Field-Effect Transistor, 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R520C6BTMA1
Infineon
Power Field-Effect Transistor, 8.1A I(D), 600V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R600C6BTMA1
Infineon
Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
IPD60R600CP
Infineon
Power Field-Effect Transistor, 6.1A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA