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Power Field-Effect Transistors

Browse our selection of power field-effect transistors products

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Showing 1751-1775 of 6912 products
FDWS9510L-F085
Onsemi
Power Field-Effect Transistor, 50A I(D), 40V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
FDZ208P
Fairchild Semi
Power Field-Effect Transistor, 12.5A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDZ2554P
Fairchild Semi
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.028ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDZ293P
Fairchild Semi
Power Field-Effect Transistor, 4.6A I(D), 20V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
FDZ294N
Fairchild Semi
Power Field-Effect Transistor, 6A I(D), 20V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDZ5047N
Fairchild Semi
Power Field-Effect Transistor, 22A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FDZ7064AS
Fairchild Semi
Power Field-Effect Transistor, 13.5A I(D), 30V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
FLC087XP
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, P-Channel, High Electron Mobility FET
FLC257MH-6
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLL120MK
Sumitomo
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
FLL357ME
Sumitomo
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
FLL400IP-2
Sumitomo
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
FLL57MK
Sumitomo
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
FLL810IQ-4C
Sumitomo
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET
FLM1011-12F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
FLM1011-4F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
FLM1011-8F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
FLM1415-8F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET
FLM3135-8F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLM3742-25F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLM3742-4F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLM4450-25F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLM4450-4F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLM4450-8F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
FLM5053-12F
Sumitomo
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET