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Power Field-Effect Transistors

Browse our selection of power field-effect transistors products

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2SK2718
Toshiba
Power Field-Effect Transistor, 2.5A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2750
Toshiba
Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2767-01
Fuji Elec
Power Field-Effect Transistor, 3.5A I(D), 900V, 5.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK2776
Toshiba
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2828
Renesas
Power Field-Effect Transistor, 12A I(D), 1.2ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET
2SK2837
Toshiba
Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2842
Toshiba
Power Field-Effect Transistor, 12A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK2857
Renesas
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
2SK2865
Toshiba
Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2887TL
Rohm
Power Field-Effect Transistor, 3A I(D), 200V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2917(F)
Toshiba
Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
2SK2920
Toshiba
Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2963(TE12L,F)
Toshiba
Power Field-Effect Transistor, 1A I(D), 100V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK2964(TE12L)
Toshiba
Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
2SK2964(TE12L,F)
Toshiba
Power Field-Effect Transistor, 2A I(D), 30V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK3000
Renesas
Power Field-Effect Transistor, 1A I(D), 40V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK3075
Toshiba
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
2SK3079A
Toshiba
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
2SK3114-AZ
Renesas
Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK3114B-S17-AY
Renesas
Power Field-Effect Transistor, 4A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK3116B-S19-AY
Renesas
Power Field-Effect Transistor, 7.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK3150L-E
Renesas
Power Field-Effect Transistor, 20A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
2SK3271-01
Fuji Elec
Power Field-Effect Transistor, 100A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
2SK3273-01MR
Fuji Elec
Power Field-Effect Transistor, 70A I(D), 60V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
2SK3305B-S19-AY
Renesas
Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB