Power Field-Effect Transistors
Browse our selection of power field-effect transistors products
Showing 6076-6100 of 6912 products
Toshiba
Power Field-Effect Transistor, 6A I(D), 30V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 6A I(D), 30V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 2A I(D), 40V, 0.208ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 6A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 3.5A I(D), 100V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 10A I(D), 30V, 0.032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 14A I(D), 12V, 0.0192ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Toshiba
Power Field-Effect Transistor, 4A I(D), 20V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
Samsung
Power Field-Effect Transistor, 6A I(D), 600V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
ST Micro
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET
ST Micro
Power Field-Effect Transistor, 60A I(D), 24V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
ST Micro
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ST Micro
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 120A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 12A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
ST Micro
Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
ST Micro
Power Field-Effect Transistor, 17A I(D), 800V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB