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Power Field-Effect Transistors

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SPW47N60C2
Infineon
Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
SPW47N60C3
Infineon
Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
SPW47N60C3FKSA1
Infineon
Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
SPW47N60CFD
Infineon
Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA
SPW47N60CFDFKSA1
Infineon
Power Field-Effect Transistor, 46A I(D), 600V, 0.083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA
SPW47N65C3
Infineon
Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
SPW47N65C3FKSA1
Infineon
Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
SPW52N50C3
Infineon
Power Field-Effect Transistor, 52A I(D), 500V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
SPW55N80C3
Infineon
Power Field-Effect Transistor, 800V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
SQ2301ES-T1_GE3
Vishay
Power Field-Effect Transistor, 3.9A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2303ES-T1_GE3
Vishay
Power Field-Effect Transistor, 2.5A I(D), 30V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2308CES-T1_GE3
Vishay
Power Field-Effect Transistor, 2.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2309ES-T1_GE3
Vishay
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.335ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236AB
SQ2315ES-T1_GE3
Vishay
Power Field-Effect Transistor, 5A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236
SQ2318AES-T1_GE3
Vishay
Power Field-Effect Transistor, 8A I(D), 40V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2325ES-T1_GE3
Vishay
Power Field-Effect Transistor, 0.84A I(D), 150V, 1.77ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
SQ2337ES-T1_BE3
Vishay
Power Field-Effect Transistor, 2.2A I(D), 80V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2337ES-T1_GE3
Vishay
Power Field-Effect Transistor, 2.2A I(D), 80V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2348ES-T1-GE3
Vishay
Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2351ES-T1_GE3
Vishay
Power Field-Effect Transistor, 3.2A I(D), 20V, 0.115ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236AB
SQ2360EES-T1-GE3
Vishay
Power Field-Effect Transistor, 4.4A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
SQ2361AEES-T1_GE3
Vishay
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2361EES-T1-GE3
Vishay
Power Field-Effect Transistor, 2.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, TO-236
SQ2361ES-T1_GE3
Vishay
Power Field-Effect Transistor, 2.8A I(D), 60V, 0.177ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
SQ2362ES-T1_BE3
Vishay
Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB