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Power Field-Effect Transistors

Browse our selection of power field-effect transistors products

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Showing 4301-4325 of 6912 products
MDF13N65BTH
Magnachip
Power Field-Effect Transistor
MDIS1502TH
Magnachip
Power Field-Effect Transistor, 45.7A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MDP13N50TH
Magnachip
Power Field-Effect Transistor
MDS3652URH
Magnachip
Power Field-Effect Transistor, 11A I(D), 30V, 0.017ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MFE201
Motorola
Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
MG15D6EM1
Toshiba
Power Field-Effect Transistor, 15A I(D), 250V, 0.24ohm, 6-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MGF0905A
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
MGF0909A
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
MGF0910A
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
MGF0913A
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
MGF0915A-01
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET
MGF1601B-01
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
MGF1801B
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
MGF1801BT
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET
MGFC36V3742
Mitsubishi
RF Power Field-Effect Transistor, N-Channel
MGFC40V5964
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MGFC44V5964
Mitsubishi
RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
MGFS45V2527A-51
Mitsubishi
RF Power Field-Effect Transistor, N-Channel
MGSF2N02ELT1
Onsemi
Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MGSF3454V
Onsemi
Power Field-Effect Transistor, 4.2A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MLD1N06CLT4
Onsemi
Power Field-Effect Transistor, 1A I(D), 59V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MLD1N06CLT4G
Onsemi
Power Field-Effect Transistor, 1A I(D), 59V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MMBF170-7-F
Diodes
Power Field-Effect Transistor, 0.2A I(D), 60V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MMD60R360QRH
Magnachip
Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-252
MMD80R900PCRH
Magnachip
Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252