Power Field-Effect Transistors

Browse our selection of power field-effect transistors products

Showing 2801-2825 of 6912 products
Infineon
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 6.5A I(D), N-Channel, Metal-oxide Semiconductor FET
Infineon
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
FC Intl
Power Field-Effect Transistor, 4.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Infineon
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 9A I(D), 20V, 0.018ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 8A I(D), 30V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor
Infineon
Power Field-Effect Transistor
Infineon
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IR
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IR
Power Field-Effect Transistor, 2.1A I(D), 100V, 0.21ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Infineon
Power Field-Effect Transistor, 8A I(D), 60V, 0.0178ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IR
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
IR
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA