Power Field-Effect Transistors Discontinued

SQM120N06-06_GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 120A I(D), 60V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: AUTOMOTIVE N-CHANNEL 60 V (D-S) 175 DEGREE CELSIUS MOSFET
Part Number: SQM120N06-06_GE3
Generic: SQM120N06
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: October 2010
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent DMT6005LCT Diodes
Functional Equivalent DMTH6005LCT Diodes
Functional Equivalent IPP100N06S2L-05 Infineon
Functional Equivalent IPP100N06S2L05AKSA1 Infineon
Functional Equivalent IPP100N06S2L05AKSA2 Infineon
Functional Equivalent IPP100N06S2L05XK Infineon
Functional Equivalent IPP80N06S207XK Infineon
Functional Equivalent IPP80N06S2LH5AKSA1 Infineon
Functional Equivalent IPP80N06S2LH5XK Infineon
Functional Equivalent SP0002-18879 Infineon
Manufacturer Suggested SQJA04EP Vishay
Functional Equivalent SQM110N05-06L_GE3 Vishay
Functional Equivalent SSF5508 Good Ark
Functional Equivalent SSF5508D Good Ark
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

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Risk Indicators
  • Lifecycle: High
  • Environmental: Med

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