Power Field-Effect Transistors Active Mature

SQJQ112ER-T1_GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 296A I(D), 100V, 0.00253ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: Automotive N-Channel 100 V (D-S) 175 degree celsius MOSFET
Part Number: SQJQ112ER-T1_GE3
Generic: SQJQ112
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
Qualifications: AEC-Q101
Date of Introduction: February 2021
Lifecycle Stage: Mature
Package Information
Package Style: SMALL OUTLINE
Terminals: 5
Operating Temperature: -55.0°C to 175.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Functional Equivalent SQJQ112E Vishay
Functional Equivalent SQJQ112E-T1_GE3 Vishay
Pricing & Availability
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Med-High

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