Power Field-Effect Transistors
Active
Mature
SQJQ112E-T1_GE3
Manufacturer: Vishay
Power Field-Effect Transistor, 296A I(D), 100V, 0.00253ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
AUTOMOTIVE N-CHANNEL 100 V (D-S) 175 DEGREE CELSIUS MOSFET
| Part Number: | SQJQ112E-T1_GE3 |
|---|---|
| Generic: | SQJQ112 |
| CAGE Code: | 18612, 0LCA7, K4184, C2817, 09969 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | February 2021 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 4 |
| Operating Temperature: | -55.0°C to 175.0°C |
|---|
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
SQJQ112E
|
Vishay |
| Functional Equivalent |
SQJQ112ER-T1_GE3
|
Vishay |
Pricing & Availability
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Risk Indicators
- Lifecycle: Low
- Environmental: High
- Supply Chain: Med