Power Field-Effect Transistors NRFND Decline

SQJ488EP-T1_GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 42A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: AUTOMOTIVE N-CHANNEL 100 V (D-S) 175 DEGREE CELCIUS MOSFET
Part Number: SQJ488EP-T1_GE3
Generic: SQJ488
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: October 2013
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 4
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested SQJ488EP-T1_BE3 Vishay
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Med
  • Environmental: Med
  • Supply Chain: Med-High

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip