Power Field-Effect Transistors
NRFND
Decline
SIS890DN-T1-GE3
Manufacturer: Vishay
Power Field-Effect Transistor, 30A I(D), 100V, 0.0235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
N-CHANNEL 100 V (D-S) MOSFET
| Part Number: | SIS890DN-T1-GE3 |
|---|---|
| Generic: | SIS890 |
| CAGE Code: | 18612, 0LCA7, K4184, C2817, 09969 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Date of Introduction: | July 2012 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 5 |
Compliance & Certifications
- EU RoHS Compliant
- DRC Status: DRC Conflict Free
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
CSD19537Q3
|
TI |
| Functional Equivalent |
SI7456DDP-T1-GE3
|
Vishay |
Pricing & Availability
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Risk Indicators
- Lifecycle: Med
- Environmental: High
- Supply Chain: Low