Power Field-Effect Transistors NRFND Decline

SI2333CDS-T1-GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 7.1A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: P-CHANNEL 12 V (D-S) MOSFET
Part Number: SI2333CDS-T1-GE3
Generic: SI2333
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 2009
Lifecycle Stage: Decline
Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested AM2327P Analog Power
Manufacturer Suggested CSD23285F5 TI
Functional Equivalent RAQ045P01TR Rohm
Manufacturer Suggested SI2333CDS-T1-BE3 Vishay
FFF Alternates SI2333CDS-T1-E3 Vishay
Functional Equivalent SI2333CDS-T1-E3 Vishay
Functional Equivalent SSM6J216FE Toshiba
Functional Equivalent SSM6J216FE(TPL3 F)
Functional Equivalent SSM6J216FE(TPL3) Toshiba
Pricing & Availability
70277 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

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