Power Field-Effect Transistors NRFND Decline

SI2319CDS-T1-GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 4.4A I(D), 40V, 0.077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Manufacturer Description: P-CHANNEL 40 V (D-S) MOSFET
Part Number: SI2319CDS-T1-GE3
Generic: SI2319
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: June 2010
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested AM2341P Analog Power
FFF Alternates PJA3441 Panjit
Functional Equivalent PJA3441 Panjit
FFF Alternates PJA3441-AU_R1_000A1 Panjit
Functional Equivalent PJA3441-AU_R1_000A1 Panjit
FFF Alternates PJA3441_R1_00001 Panjit
Functional Equivalent PJA3441_R1_00001 Panjit
FFF Alternates PJA3441_R2_00001 Panjit
Functional Equivalent PJA3441_R2_00001 Panjit
Manufacturer Suggested SI2319CDS-T1-BE3 Vishay
Pricing & Availability
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Risk Indicators
  • Lifecycle: Med
  • Environmental: Low
  • Supply Chain: Med-High

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