Power Field-Effect Transistors Active Mature

SI2312CDS-T1-GE3

Manufacturer: Vishay

Power Field-Effect Transistor, 6A I(D), 20V, 0.0318ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236

Manufacturer Description: N-CHANNEL 20 V (D-S) MOSFET
Part Number: SI2312CDS-T1-GE3
Generic: SI2312
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: March 2010
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
Manufacturer Suggested AM2314N Analog Power
Manufacturer Suggested CSD17318Q2 TI
Manufacturer Suggested SI2312CDS-T1-BE3 Vishay
Functional Equivalent SI2374DS-T1-GE3 Vishay
Pricing & Availability
230375 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Med

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