Power Field-Effect Transistors Discontinued

SI2307BDS-T1-BE3

Manufacturer: Vishay

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: P-CHANNEL 30-V (D-S) MOSFET
Part Number: SI2307BDS-T1-BE3
Generic: SI2307
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: August 2020
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C
Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates LP3407BLT1G LeshanRadio
Functional Equivalent LP3407BLT1G LeshanRadio
FFF Alternates LP3407BLT3G LeshanRadio
Functional Equivalent LP3407BLT3G LeshanRadio
FFF Alternates LP3407ELT1G LeshanRadio
Functional Equivalent LP3407ELT1G LeshanRadio
FFF Alternates LP3407SLT1G LeshanRadio
Functional Equivalent LP3407SLT1G LeshanRadio
FFF Alternates SI2307CDS-T1-BE3 Vishay
Functional Equivalent SI2307CDS-T1-BE3 Vishay
FFF Alternates SI2307CDS-T1-E3 Vishay
Functional Equivalent SI2307CDS-T1-E3 Vishay
FFF Alternates SI2307CDS-T1-GE3 Vishay
Functional Equivalent SI2307CDS-T1-GE3 Vishay
Pricing & Availability
41106 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details