Power Field-Effect Transistors Discontinued

SI2307BDS-T1-BE3

Manufacturer: Vishay

Power Field-Effect Transistor, 2.5A I(D), 30V, 0.078ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB

Manufacturer Description: P-CHANNEL 30-V (D-S) MOSFET
Part Number: SI2307BDS-T1-BE3
Generic: SI2307
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: August 2020
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 3
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates LP3407BLT1G LeshanRadio
Functional Equivalent LP3407BLT1G LeshanRadio
FFF Alternates LP3407BLT3G LeshanRadio
Functional Equivalent LP3407BLT3G LeshanRadio
FFF Alternates LP3407ELT1G LeshanRadio
Functional Equivalent LP3407ELT1G LeshanRadio
FFF Alternates LP3407SLT1G LeshanRadio
Functional Equivalent LP3407SLT1G LeshanRadio
FFF Alternates SI2307CDS-T1-BE3 Vishay
Functional Equivalent SI2307CDS-T1-BE3 Vishay
FFF Alternates SI2307CDS-T1-E3 Vishay
Functional Equivalent SI2307CDS-T1-E3 Vishay
FFF Alternates SI2307CDS-T1-GE3 Vishay
Functional Equivalent SI2307CDS-T1-GE3 Vishay
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip