Power Field-Effect Transistors Discontinued

IRL640S

Manufacturer: Vishay

Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: HEXFET POWER MOSFET
Part Number: IRL640S
Generic: IRL640S
CAGE Code: 18612, 0LCA7, K4184, C2817, 09969
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: May 1994
Lifecycle Stage: Discontinued

Package Information
Package Style: SMALL OUTLINE
Terminals: 2

Compliance & Certifications
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
FFF Alternates IRL640SPBF Vishay
Functional Equivalent IRL640SPBF Vishay
FFF Alternates IRL640STRLPBF Vishay
Functional Equivalent IRL640STRLPBF Vishay
FFF Alternates IRL640STRRPBF Vishay
Functional Equivalent IRL640STRRPBF Vishay
Manufacturer Suggested SIHL640S Vishay
FFF Alternates SIHL640S-E3 Vishay
Functional Equivalent SIHL640S-E3 Vishay
FFF Alternates SIHL640S-GE3 Vishay
Functional Equivalent SIHL640S-GE3 Vishay
FFF Alternates SIHL640STL-E3 Vishay
Functional Equivalent SIHL640STL-E3 Vishay
FFF Alternates SIHL640STRL-GE3 Vishay
Functional Equivalent SIHL640STRL-GE3 Vishay
FFF Alternates SIHL640STRR-GE3 Vishay
Functional Equivalent SIHL640STRR-GE3 Vishay
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic