IRFSL11N50A
Manufacturer: Vishay
Power Field-Effect Transistor, 11A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
| Part Number: | IRFSL11N50A |
|---|---|
| Generic: | IRFSL11N50 |
| CAGE Code: | 18612, 0LCA7, K4184, C2817, 09969 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | September 1999 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | IN-LINE |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
IRFSL11N50APBF
|
Vishay |
| Functional Equivalent |
IRFSL11N50APBF
|
Vishay |
| FFF Alternates |
SIHFSL11N50A
|
Vishay |
| Functional Equivalent |
SIHFSL11N50A
|
Vishay |
| Manufacturer Suggested |
SIHFSL11N50A
|
Vishay |
| FFF Alternates |
SIHFSL11N50A-E3
|
Vishay |
| Functional Equivalent |
SIHFSL11N50A-E3
|
Vishay |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: High
- Environmental: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic