IRFB9N60A
Manufacturer: Vishay
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
| Part Number: | IRFB9N60A |
|---|---|
| Generic: | IRFB9N60 |
| CAGE Code: | 18612, 0LCA7, K4184, C2817, 09969 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | October 1998 |
| Lifecycle Stage: | Discontinued |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| FFF Alternates |
IRFB9N60APBF
|
Vishay |
| Functional Equivalent |
IRFB9N60APBF
|
Vishay |
| Manufacturer Suggested |
IRFB9N60APBF
|
Vishay |
| FFF Alternates |
SIHFB9N60A
|
Vishay |
| Functional Equivalent |
SIHFB9N60A
|
Vishay |
| Manufacturer Suggested |
SIHFB9N60A
|
Vishay |
| FFF Alternates |
SIHFB9N60A-E3
|
Vishay |
| Functional Equivalent |
SIHFB9N60A-E3
|
Vishay |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: High
- Environmental: High
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic