UT2309G-AE3-R
Manufacturer: Unisonic
Power Field-Effect Transistor, 3.7A I(D), 30V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
| Part Number: | UT2309G-AE3-R |
|---|---|
| Generic: | UT2309 |
| CAGE Code: | SDM38 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | November 2007 |
| Lifecycle Stage: | Mature |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- EU RoHS Compliant
- REACH Compliant
- DRC Status: DRC Conflict Free
Abacus Technologies supplies UT2309G-AE3-R, sourced from UNISONIC TECHNOLOGIES CO LTD. Inventory shown on this page reflects quantity on hand when available: 18414 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present.
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
PJA3405-AU_R1_000A1
|
Panjit |
| Functional Equivalent |
PJA3405_R1_00001
|
Panjit |
| Functional Equivalent |
PJA3405_R2_00001
|
Panjit |
| Functional Equivalent |
RRH040P03TB1
|
Rohm |
| FFF Alternates |
UT2309L-AE3-R
|
Unisonic |
| Functional Equivalent |
UT2309L-AE3-R
|
Unisonic |
| Functional Equivalent |
UTC654G-AG6-R
|
Unisonic |
| Functional Equivalent |
UTC654L-AG6-R
|
Unisonic |
Pricing & Availability
B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.
Get pricing — no account needed
Browse More
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Med
Need help? Email sales or call (800) 701-8152.
Related Products
10N80L-TF1-T
Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
12NM80G-TF3-T
Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
13NM80G-TF1-T
Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Unisonic
1N60G-AA3-R
Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Unisonic