Power Field-Effect Transistors
NRFND
Decline
XK1R9F10QB,LXGQ
Manufacturer: Toshiba
Power Field-Effect Transistor, 160A I(D), 100V, 0.00331ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
MOSFET Silicon N-channel MOS (U-MOSX-H)
| Part Number: | XK1R9F10QB,LXGQ |
|---|---|
| Generic: | XK1R9 |
| CAGE Code: | 61802 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| Qualifications: | AEC-Q101 |
|---|---|
| Date of Introduction: | June 2020 |
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Functional Equivalent |
CSD19536KCS
|
TI |
| Functional Equivalent |
IAUT150N10S5N035
|
Infineon |
| Functional Equivalent |
IAUT150N10S5N035ATMA1
|
Infineon |
Pricing & Availability
3737 units available
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AS6081, AS9120b, IDEA, ERAI, ISO9001
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Risk Indicators
- Lifecycle: Med
- Environmental: Med
- Supply Chain: High
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