RF Small Signal Field-Effect Transistors Discontinued

3SK240

Manufacturer: Toshiba

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

Manufacturer Description: GAAS N-CHANNEL DUAL GATE MES TYPE FIELD EFFECT TRANSISTOR
Part Number: 3SK240
Generic: 3SK240
CAGE Code: 61802
Category: RF Small Signal Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1994
Lifecycle Stage: Discontinued
Package Information
Package Style: SMALL OUTLINE
Terminals: 4
Compliance & Certifications
Type Part Number Manufacturer
Manufacturer Suggested 3SK299 Toshiba
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: High

Need help? Email sales or call (800) 701-8152.

Related Products

2N3819

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-92

Central Semi

View Details
2N3821

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, …

Microchip

View Details
2N3822

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF

Microchip

View Details
2N3823

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AF

Microchip

View Details