Power Field-Effect Transistors
EOL
Phase-Out
2SK3569
Manufacturer: Toshiba
Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Manufacturer Description:
SILICON N CHANNEL MOS TYPE (PI-MOSVI) FIELD EFFECT TRANSISTOR
| Part Number: | 2SK3569 |
|---|---|
| Generic: | 2SK3569 |
| CAGE Code: | 61802 |
| Category: | Power Field-Effect Transistors |
| Part Type: | Transistors |
| DLA Qualification: | Not Qualified |
|---|---|
| Date of Introduction: | March 2004 |
| Lifecycle Stage: | Phase-Out |
Package Information
| Package Style: | FLANGE MOUNT |
|---|---|
| Terminals: | 3 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
| Type | Part Number | Manufacturer |
|---|---|---|
| Manufacturer Suggested |
2SK3569(Q)
|
Toshiba |
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates.
Contact us
or use Request Quote below.
Contact us for pricing and availability.
Browse More
Risk Indicators
- Lifecycle: High
- Environmental: Med
- Supply Chain: High