Power Bipolar Transistors
Active
Decline
2SC6076(TE16L1,NV)
Manufacturer: Toshiba
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Manufacturer Description:
TRANSISTOR SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
| Part Number: | 2SC6076(TE16L1,NV) |
|---|---|
| Generic: | 2SC6076 |
| CAGE Code: | 61802 |
| Category: | Power Bipolar Transistors |
| Part Type: | Transistors |
| Date of Introduction: | December 2009 |
|---|---|
| Lifecycle Stage: | Decline |
Package Information
| Package Style: | SMALL OUTLINE |
|---|---|
| Terminals: | 2 |
Compliance & Certifications
- DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates.
Contact us
or use Request Quote below.
Contact us for pricing and availability.
Risk Indicators
- Lifecycle: Low
- Environmental: Med
- Supply Chain: Low
Related Products
1DI300M-120
Power Bipolar Transistor, 300A I(C), 1200V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 5 Pin
Fuji Elec