RF Power Bipolar Transistors Discontinued

2SC2510

Manufacturer: Toshiba

RF Power Bipolar Transistor, 1-Element, High Frequency Band, Silicon, NPN

Manufacturer Description: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR
Part Number: 2SC2510
Generic: 2SC2510
CAGE Code: 61802
Category: RF Power Bipolar Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: July 1978
Lifecycle Stage: Discontinued
Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Compliance & Certifications
Type Part Number Manufacturer
Manufacturer Suggested 2SC2510A Toshiba
Functional Equivalent BLW76 ASI
Functional Equivalent BLW77 ASI
Functional Equivalent HF100-28 ASI
Functional Equivalent HF75-28F ASI
Functional Equivalent SD1407 ASI
Pricing & Availability
Pricing information not available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001
Get pricing — no account needed
We'll send pricing and availability shortly.
Already have an account?
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High

Need help? Email sales or call (800) 701-8152.

Related Products

0912-7

RF Power Bipolar Transistor, 1-Element, L Band, Silicon, NPN

Microsemi

View Details
2N3375

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-60

ASI

View Details
2N3866

RF Power Bipolar Transistor, 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-39

Microchip

View Details
2N5641

RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN

ASI

View Details