Power Field-Effect Transistors Active Mature

CSD88599Q5DC

Manufacturer: TI

Power Field-Effect Transistor, 60V, 0.0033ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 60-VOLT HALF-BRIDGE NEXFET POWER BLOCK
Part Number: CSD88599Q5DC
Generic: CSD88599
CAGE Code: 01295, 33809
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: April 2017
Lifecycle Stage: Mature

Package Information
Package Style: FLATPACK
Terminals: 22
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip