Power Field-Effect Transistors Active Mature

CSD25310Q2

Manufacturer: TI

Power Field-Effect Transistor, -9.6A I(D), 20V, 0.089ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 20 V P-CHANNEL NEXFET POWER MOSFET
Part Number: CSD25310Q2
Generic: CSD25310
CAGE Code: 01295, 33809
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: January 2014
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 6
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • REACH Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free
Type Part Number Manufacturer
FFF Alternates CSD25310Q2T TI
Functional Equivalent CSD25310Q2T TI
Manufacturer Suggested FDMA910PZ Onsemi
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Low
  • Supply Chain: Low

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip