Power Field-Effect Transistors Active Mature

CSD17556Q5B

Manufacturer: TI

Power Field-Effect Transistor, 215A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Manufacturer Description: 30V N-CHANNEL NEXFET POWER MOSFET
Part Number: CSD17556Q5B
Generic: CSD17556
CAGE Code: 01295, 33809
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: March 2013
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 8
Operating Temperature: -55.0°C to 150.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free

Abacus Technologies supplies CSD17556Q5B, sourced from TEXAS INSTRUMENTS. Inventory shown on this page reflects quantity on hand when available: 4810 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
Functional Equivalent BSB017N03LX3GXT Infineon
Functional Equivalent BSC0500NSI Infineon
Functional Equivalent BSC0500NSIATMA1 Infineon
Functional Equivalent CSD17556Q5BT TI
Pricing & Availability
89124 units available
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Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

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Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low

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