Power Field-Effect Transistors EOL Phase-Out

STD10NM60ND

Manufacturer: ST Micro

Power Field-Effect Transistor, 8A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: 600 VOLT, 570 MILLI OHM TYP., 8 AMP FDMESH II POWER MOSFET
Part Number: STD10NM60ND
Generic: STD10
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2011
Lifecycle Stage: Phase-Out
Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies STD10NM60ND, sourced from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 700000 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. If something

Type Part Number Manufacturer
FFF Alternates STD10NM60N ST Micro
Functional Equivalent STD10NM60N ST Micro
Manufacturer Suggested STD13N60DM2 ST Micro
Pricing & Availability
700000 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —
Back to Catalog
Browse More
Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Med

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

View Details
1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic

View Details