Power Field-Effect Transistors EOL Phase-Out

STW55NM60ND

Manufacturer: ST Micro

Power Field-Effect Transistor, 51A I(D), 600V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

Manufacturer Description: N-CHANNEL 600 V-0.047 OHM-51 A TO-247 FDMESH II POWER MOSFET (WITH FAST DIODE)
Part Number: STW55NM60ND
Generic: STW55NM60
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: November 2007
Lifecycle Stage: Phase-Out

Package Information
Package Style: FLANGE MOUNT
Terminals: 3

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent STW56N60DM2 ST Micro
Manufacturer Suggested STW56N60DM2 ST Micro
Manufacturer Suggested STW65N60DM6 ST Micro
Manufacturer Suggested STW70N60DM2 ST Micro
Manufacturer Suggested STWA67N60DM6 ST Micro
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip