Insulated Gate Bipolar Transistors Active Mature

STGWT80H65DFB

Manufacturer: ST Micro

Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel

Manufacturer Description: TRENCH GATE FIELD-STOP IGBT, HB SERIES 650 V, 80 A HIGH SPEED
Part Number: STGWT80H65DFB
Generic: STGWT80H65
CAGE Code: F8859, 50088, SCR76, 66958
Category: Insulated Gate Bipolar Transistors
Part Type: Transistors
Date of Introduction: March 2013
Lifecycle Stage: Mature

Package Information

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Functional Equivalent STGWA80H65DFB ST Micro
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: High
  • Supply Chain: Low-Med

Related Products

1MBH65D-090A

Insulated Gate Bipolar Transistor, 65A I(C), 900V V(BR)CES, N-Channel

Fuji Elec

1MBI200L-120

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel

Fuji Elec

1MBI2400U4D-170

Insulated Gate Bipolar Transistor, 3600A I(C), 1700V V(BR)CES, N-Channel

Fuji Elec

1MBI300JN120

Insulated Gate Bipolar Transistor, 300A I(C), 1200V V(BR)CES

Fuji Elec