Power Field-Effect Transistors Active Decline

STD35P6LLF6

Manufacturer: ST Micro

Power Field-Effect Transistor, 35A I(D), 60V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Manufacturer Description: P-CHANNEL 60 V, 0.025 OHM TYP., 35 A STRIPFET F6 POWER MOSFET IN A DPAK PACKAGE
Part Number: STD35P6LLF6
Generic: STD35P6
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: February 2015
Lifecycle Stage: Decline

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip