Power Field-Effect Transistors Active Mature

STB80NF10T4

Manufacturer: ST Micro

Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Manufacturer Description: N-CHANNEL 100 V, 0.012 OHM, 80 A, D2PAK LOW GATE CHARGE STRIPFET II POWER MOSFET
Part Number: STB80NF10T4
Generic: STB80NF10
CAGE Code: F8859, 50088, SCR76, 66958
NSN: 5961-01-594-7966
Category: Power Field-Effect Transistors
Part Type: Transistors
DLA Qualification: Not Qualified
Date of Introduction: January 1980
Lifecycle Stage: Mature

Package Information
Package Style: SMALL OUTLINE
Terminals: 2
Operating Temperature: -55.0°C to 175.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • PFAS: NO
  • DRC Status: DRC Conflict Free Undeterminable
Type Part Number Manufacturer
Manufacturer Suggested CSD19532KTT TI
FFF Alternates STB80NF10 ST Micro
Functional Equivalent STB80NF10 ST Micro
Pricing & Availability
Need help? We can confirm pricing, date codes, and alternates. Contact us or use Request Quote below.
Contact us for pricing and availability.
Back to Catalog

Risk Indicators
  • Lifecycle: Low
  • Environmental: Med
  • Supply Chain: Low-Med

Related Products

2389

Power Field-Effect Transistor, 35A I(D), 60V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

NTE

2N3796

Power Field-Effect Transistor, 0.02A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Motorola

2N4856

Power Field-Effect Transistor

Microchip

2N4857

Power Field-Effect Transistor

Microchip