Power Field-Effect Transistors EOL Phase-Out

SCTWA70N120G2V-4

Manufacturer: ST Micro

Power Field-Effect Transistor, 91A I(D), 1200V, 0.03ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET

Manufacturer Description: Silicon carbide Power MOSFET 1200 V, 21 MILLI OHM typ., 91 A in an HiP247-4 package
Part Number: SCTWA70N120G2V-4
Generic: SCTWA70N120G2
CAGE Code: F8859, 50088, SCR76, 66958
Category: Power Field-Effect Transistors
Part Type: Transistors
Date of Introduction: June 2021
Lifecycle Stage: Phase-Out

Package Information
Package Style: FLANGE MOUNT
Terminals: 4
Operating Temperature: -55.0°C to 200.0°C

Compliance & Certifications
  • EU RoHS Compliant
  • DRC Status: DRC Conflict Free Undeterminable

Abacus Technologies supplies SCTWA70N120G2V-4 from ST MICROELECTRONICS. Inventory shown on this page reflects quantity on hand when available: 27126 units. This is an electronic component listed for B2B buyers. You can add the part to your cart if purchase options are enabled, or submit a request for quote. Our team can confirm lead time, package options, and alternates. For compliance or manufacturer-specific details, use the spec blocks on this page when present. Contact Abacus Technologies.

Type Part Number Manufacturer
Manufacturer Suggested MSC025SMA120B4 Microchip
Manufacturer Suggested SCT020W120G3-4AG ST Micro
Pricing & Availability
27126 units available
Contact us for pricing
Quote response: shortly
AS6081, AS9120b, IDEA, ERAI, ISO9001

B2B and commercial accounts only: we quote OEMs, contract manufacturers, and military/primes.

Get pricing — no account needed
— or just save it to a cart —

Browse More

Risk Indicators
  • Lifecycle: High
  • Environmental: Med
  • Supply Chain: Med-High

Need help? Email sales or call (800) 701-8152.

Related Products

10N80L-TF1-T

Power Field-Effect Transistor, 10A I(D), 800V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

12NM80G-TF3-T

Power Field-Effect Transistor, 12A I(D), 800V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

13NM80G-TF1-T

Power Field-Effect Transistor, 13A I(D), 800V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Unisonic

1N60G-AA3-R

Power Field-Effect Transistor, 1.2A I(D), 600V, 11.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Unisonic